| 发明名称 |
Chemically amplified resist composition, process for manufacturing semiconductor device and patterning process |
| 摘要 |
An objective of this invention is to prevent resist poisoning and sensitivity deterioration in a chemically amplified resist. The chemically amplified resist comprises a base resin, a photoacid generator and a salt exhibiting buffer effect in the base resin.
|
| 申请公布号 |
US7479361(B2) |
申请公布日期 |
2009.01.20 |
| 申请号 |
US20040868968 |
申请日期 |
2004.06.17 |
| 申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
NAGAHARA SEIJI;HIROI MASAYUKI |
| 分类号 |
G03F7/00;G03F7/004;G03F7/038;G03F7/039;G03F7/11;G03F7/40;H01L21/027;H01L21/768 |
主分类号 |
G03F7/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
