Plasma process apparatus and its processor

摘要

A plasma processing apparatus and a processing apparatus having a widened process condition range allowing plasma generation are obtained by increasing microwave propagation efficiency. The plasma processing apparatus includes a processing chamber where plasma processing is performed, and microwave introducer for introducing microwaves into the processing chamber. The microwave introducer includes a dielectric member transmitting the microwaves. The dielectric member has a shape in cross section in a direction approximately perpendicular to a transmitting direction of the microwaves through the dielectric member that allows transmission of the microwaves of substantially a single mode. The dielectric member has a thickness T in the transmitting direction that satisfies a condition of (lambdax(2m+0.7)/4)<=T<=(lambdax(2m+1.3)/4), where lambda is a wavelength of the microwaves of the single mode transmitted through the dielectric member and m is an arbitrary integer.