发明名称 |
System and method for driving a power field-effect transistor (FET) |
摘要 |
A system and method is provided for driving a power field-effect transistor (FET). In one embodiment, a system comprises a control circuit that generates a control signal to provide a gate voltage of the power FET. The system further comprises a slope control circuit coupled between the control circuit and the power FET that is operative to dynamically control the rate-of-change of a gate voltage of the power FET to reduce electromagnetic interference (EMI) emissions and power loss resulting from switching the power FET.
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申请公布号 |
US7479770(B2) |
申请公布日期 |
2009.01.20 |
申请号 |
US20050116835 |
申请日期 |
2005.04.28 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
KOHOUT JAMES ALLEN;BALDWIN DAVID JOHN |
分类号 |
G05F1/40;H03K17/16 |
主分类号 |
G05F1/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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