发明名称 System and method for driving a power field-effect transistor (FET)
摘要 A system and method is provided for driving a power field-effect transistor (FET). In one embodiment, a system comprises a control circuit that generates a control signal to provide a gate voltage of the power FET. The system further comprises a slope control circuit coupled between the control circuit and the power FET that is operative to dynamically control the rate-of-change of a gate voltage of the power FET to reduce electromagnetic interference (EMI) emissions and power loss resulting from switching the power FET.
申请公布号 US7479770(B2) 申请公布日期 2009.01.20
申请号 US20050116835 申请日期 2005.04.28
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 KOHOUT JAMES ALLEN;BALDWIN DAVID JOHN
分类号 G05F1/40;H03K17/16 主分类号 G05F1/40
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