发明名称 |
Gasless high voltage high contact force wafer contact-cooling electrostatic chuck |
摘要 |
A method of electrostatically chucking a wafer while removing heat from the wafer in a plasma reactor includes providing a polished generally continuous surface on a puck, placing the wafer on the polished surface of the puck and cooling the puck. A chucking voltage is applied to an electrode within the puck to electrostatically pull the wafer onto the surface of the puck with sufficient force to attain a selected heat transfer coefficient between contacting surfaces of the puck and wafer.
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申请公布号 |
US7479456(B2) |
申请公布日期 |
2009.01.20 |
申请号 |
US20040929104 |
申请日期 |
2004.08.26 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
BUCHBERGER, JR. DOUGLAS A.;HOFFMAN DANIEL J.;RAMASWAMY KARTIK;NGUYEN ANDREW;HANAWA HIORJI;COLLINS KENNETH S.;AL-BAYATI AMIR |
分类号 |
H01L21/461;H01L21/302 |
主分类号 |
H01L21/461 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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