Semiconductor device and method of manufacturing the same

摘要

A semiconductor device includes a gate structure formed on a substrate. The gate structure includes an uppermost first metal silicide layer pattern having a first thickness. Spacers are formed on sidewalls of the gate structure. One or more impurity regions are formed in the substrate adjacent to at least one sidewall of the gate structure. A second metal silicide layer pattern, having a second thickness thinner than the first thickness, is formed on the one or more impurity regions.