发明名称 Bonding pad structure disposed in semiconductor device and related method
摘要 The present invention discloses a bonding pad structure disposed in a semiconductor device and a method for forming the bonding pad structure. The semiconductor device includes a substrate. The bonding pad structure includes a connection structure and an induction structure. The connection structure allows for a direct connection with a bonding wire. The induction structure is coupled with the connection structure and lowers an effective capacitance between the bonding wire and the substrate.
申请公布号 US7479698(B2) 申请公布日期 2009.01.20
申请号 US20070753567 申请日期 2007.05.24
申请人 FARADAY TECHNOLOGY CORP. 发明人 KER MING-DOU;HSIAO YUAN-WEN;TSENG YUH-KUANG
分类号 H01L23/48 主分类号 H01L23/48
代理机构 代理人
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