| 摘要 |
A semiconductor package capable of enough securing alignment margin and manufacturing method thereof are provided to buffer stress between through electrode and semiconductor die by forming relatively thick insulator between the through electrode and the semiconductor die. A semiconductor die(100) has a first surface and a second surface of flat type. A plurality of bonding pads is formed on the first surface. A first through hole penetrates the bonding pad, the first surface, and the second surface. A first passivation layer(200) is formed on the first surface of the semiconductor die. The bonding pad is exposed through the first passivation layer. The first through hole is filled with an insulator(300). The insulator has a first surface and a second surface of flat type, and penetrates between the first surface and the second surface. The second through hole is filled with a through electrode(400).
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