| 摘要 |
<p>A high voltage device and method for manufacturing the same is provided to remove a field stop region and reduce the width of the inactive region by making a separation film deeper than the drift layer. A device isolation film(205A) is formed within the semiconductor substrate(200) and the active area and it is deeper than the drift layer(206) partly at the active area. The gate electrode(209) is formed on the active area, and a source and drain region(211) are formed within the drift layer on both sides of the gate electrode. The device isolation film is deeply formed than the drift layer by 1.1~2 times while having width of 1.0 - 1.2um. The drift area is formed so that at least one side of it contacts with the device isolation film, and the drift layer is formed through an ion injection process.</p> |
