| 摘要 |
<p>Methods to reduce the minimum pitch of a pattern are described. A photo-resist on a substrate is exposed to a radiation through a mask. The mask has features that are separated by a distance. Photo-resist portions having a first exposure to the radiation, second exposure to the radiation, and third exposure to the radiation are created. The photo-resist portions having the first exposure to the radiation are selectively removed from the substrate using a first chemistry. The second photo-resist portions having the second exposure to the radiation are selectively removed from the substrate using a second chemistry. The photo-resist portions having the third exposure to the radiation remain to form a pattern on the substrate. The distance between features of the pattern is at least twice smaller than the distance between the features of the mask.</p> |
