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发明名称
铜内连线用的氮化钴层及其制造方法
摘要
一种供积体电路用之内连线结构,其并入有利于铜线长晶、生长以及黏着之氮化钴层。氮化钴可沈积于诸如氮化钨或氮化钽之耐火金属氮化物或碳化物层上,此耐火金属氮化物或碳化物层充当铜之扩散障壁且亦增加氮化钴与下伏绝缘体之间的黏着。氮化钴可由化学气相沈积自新颖 基化钴前驱物形成。沈积于氮化钴上之铜层显示高电导率且可充当用于微电子学之铜导体之电化学沈积的种子层。
申请公布号
TW200903718
申请公布日期
2009.01.16
申请号
TW097112818
申请日期
2008.04.09
申请人
哈佛大学校长及评议会
发明人
葛登 罗伊G;金宏;班德瑞 哈里绪B
分类号
H01L21/768(2006.01);H01L21/3205(2006.01)
主分类号
H01L21/768(2006.01)
代理机构
代理人
詹铭文;萧锡清
主权项
地址
美国
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