首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
蚀刻剂及使用其制造包括薄膜电晶体电子元件方法
摘要
本具体实例系关于一种蚀刻剂及制造包括薄膜电晶体之电子元件之方法。蚀刻剂包括氟离子(F#sP!-#eP!)源、过氧化氢(H#sB!2#eB!O#sB!2#eB!)、硫酸盐、磷酸盐、以唑为基础之化合物及溶剂。蚀刻剂及制造包括薄膜电晶体之电子元件之方法可批次蚀刻包括铜层及钛或钛合金层之多层膜,且可以高良率提供具有优良图案轮廓之薄膜电晶体。当重新使用蚀刻剂时,可维持均匀蚀刻效能及具有蚀刻剂之长替换周期,且因此可节省成本。
申请公布号
TW200902762
申请公布日期
2009.01.16
申请号
TW097106207
申请日期
2008.02.22
申请人
三星SDI股份有限公司
发明人
曹奎哲;金广男
分类号
C23F1/14(2006.01);H01L29/786(2006.01)
主分类号
C23F1/14(2006.01)
代理机构
代理人
桂齐恒;阎启泰
主权项
地址
南韩
您可能感兴趣的专利
OPTICAL SEMICONDUCTOR DEVICE
INTERACTIVE GAMES ON A TELEVISION VIA INTERNET
GAS DELIVERY SYSTEM WITH CONSTANT OVERPRESSURE RELATIVE TO AMBIENT TO SYSTEM WITH VARYING VACUUM SUCTION
CONTENT GENERATION SYSTEM, CONTENT GENERATION DEVICE, AND CONTENT GENERATION PROGRAM
PROCESS FOR MANUFACTURING PLATINUM TEMPERATURE-MEASURING RESISTANCE ELEMENT
OPERATION SUPPORT SYSTEM
GAMING SYSTEM WITH ELIMINATION FEATURE
DISPENSER FOR SHEET MATERIAL
METHOD AND SYSTEM FOR PROVIDING CARD GAME SERVICES
Photomask correcting method and manufacturing method of semiconductor device
TREATMENT MACHINE
HIGH EFFICIENCY FLP SITE-SPECIFIC RECOMBINATION IN MAMMALIAN CELLS USING AN OPTIMIZED FLP GENE
REMOVAL OF CO2, N2, AND H2S FROM GAS MIXTURES CONTAINING SAME
PROCESS FOR THE PREPARATION OF GRANULES BASED ON EXPANDABLE THERMOPLASTIC POLYMERS AND RELATIVE PRODUCT
METHOD FOR CONTROLLING PROCESS GAS CONCENTRATION
DISPOSABLE SURGICAL INSTRUMENT HAVING A LOCKING DEVICE
PROTECTIVE SLEEVE HAVING AN INTEGRAL CLOSURE MEMBER
DISK STORAGE MANAGEMENT OF A TAPE LIBRARY WITH DATA BACKUP AND RECOVERY
COUPLED MONOPOLAR AND MULTIPOLAR PULSING FOR CONDITIONING AND STIMULATION
Image Forming Apparatus