METHOD OF OPERATING A NON-VOLATILE MEMORY DEVICE

摘要

An operation method of nonvolatile memory device is provided to rapidly stabilize data recorded in a memory cell by inducing a boosting voltage to a channel of the memory cell. Data is recorded by supplying a program voltage to a memory cell selected among a plurality of memory cells(S110). The recorded data is stabilized(S120). Injection quantity of electron is determined by measuring a current flowed in the memory cell. Data recording quantity is verified according to the decision result. The stabilized data is verified(S130). A program completion is determined(S140). A program voltage is increased in case a program is not completed(S150). A total process is repeated by using an increased program voltage.