| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device reducing a coverage fail caused by the step of an island-like semiconductor layer when forming a protective film and an interlayer insulating film. SOLUTION: In a bottom gate type thin-film transistor, a channel formation region is formed by an intrinsic or substantially intrinsic layer that does not overlap with a layer containing phosphorus. In the semiconductor device, a semiconductor film has a projection having thickness equal to that of the channel formation region at an edge, thickness is smaller than the intrinsic or substantially intrinsic layer overlapping with the layer containing phosphorus in the channel formation region and the projection, and the protective film covers the channel formation region and the projection. COPYRIGHT: (C)2009,JPO&INPIT
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