LATERAL JUNCTION FIELD EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a lateral junction field effect transistor and a method of manufacturing the same, which can suppress generation of a leakage current in an OFF operation. SOLUTION: An n-type epitaxial layer 4 and a gate region 5 are formed in sequence on a p-epitaxial layer 3. A gate electrode 12a is electrically connected to the gate region 5. A source electrode 12b and a drain electrode 12c are arranged separately from each other so as to sandwich the gate electrode 12a, and electrically connected to the n-type epitaxial layer 4 via an n+source region 6 and an n+drain region 7, respectively. A concave portion which reaches the n-type epitaxial layer 4 is formed on the side of the n+source region 6. A p+impurity region 8 is formed so as to reach the p-epitaxial layer 3 from the bottom of the concave portion. A control electrode 12d is electrically connected to the p+impurity region 8, and electrically insulated from the source electrode 12b. COPYRIGHT: (C)2009,JPO&INPIT