| 发明名称 |
Semiconductor device and electronic device |
| 摘要 |
A channel forming region of a thin-film transistor is covered with an electrode and wiring line that extends from a source line. As a result, the channel forming region is prevented from being illuminated with light coming from above the thin-film transistor, whereby the characteristics of the thin-film transistor can be made stable.
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| 申请公布号 |
US2009015534(A1) |
申请公布日期 |
2009.01.15 |
| 申请号 |
US20080230808 |
申请日期 |
2008.09.05 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ZHANG HONGYONG |
| 分类号 |
G02F1/136;G09G3/36;G02F1/1362;G02F1/1368;H01L21/336;H01L29/78;H01L29/786;H01L33/00 |
主分类号 |
G02F1/136 |
| 代理机构 |
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代理人 |
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