| 摘要 |
<p>The invention relates to a method that uses a low-pressure plasma to deposit a barrier coating on a substrate, of the type in which the plasma is obtained by partial ionisation, under the influence of an electromagnetic field, of a reaction fluid injected at low pressure into a treatment zone. The method includes: at least a step in which a first layer, obtained in the plasma state bearing a mixture containing at least one organosilicon compound and one other compound, is deposited on the substrate; a step in which a second layer, essentially consisting of a silicon oxide having formula SiOx, is deposited on the first layer; and at least a step in which a third layer, obtained in the plasma state bearing a mixture containing at least one organosilicon compound and one other compound, is deposited on the second layer, said aforementioned other compounds both taking the form of nitrogen compounds, such as nitrogen gas.</p> |
