| 摘要 |
<p>A manufacturing method of semiconductor device is provided to prevent damage generated in manufacturing a gate oxide film and to minimize threshold voltage change of a device by forming a gate oxide film for logic after forming a first and a second well regions for logic. A manufacturing method of semiconductor device comprises the following steps: a step for providing a substrate(10) on which a logic region and a high voltage region are defined; a step for forming a first well region(12a) and a second well region(12b) for logic on the substrate of the logic region; and a step for forming a gate oxide film for logic on the first well region and the second well region for logic.</p> |
