发明名称 |
HYBRID INTEGRATED CIRCUIT DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To solve the problem of size bulkiness of a hybrid IC device using a metal substrate with the backside of the metal substrate exposed and a heat radiating film provided on the exposed surface. SOLUTION: A desired circuit is achieved by providing a first circuit element group on the surface of a metal substrate 13, and a second circuit element group on the backside of the metal substrate. The surface and backside coating resins, and the side covering resin are formed integrally with a transfer mold. A third arrangement region B on the backside has the substrate backside exposed with a heat radiating film 21 provided therein. COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009010213(A) |
申请公布日期 |
2009.01.15 |
申请号 |
JP20070170851 |
申请日期 |
2007.06.28 |
申请人 |
SANYO ELECTRIC CO LTD;SANYO SEMICONDUCTOR CO LTD |
发明人 |
SAKUMA YUKINAO;ICHIHASHI JUNICHI;KATAOKA HIROYUKI;IIMURA TOSHIYUKI;TSUYUKI SHINICHI |
分类号 |
H01L25/07;H01L23/36;H01L25/18 |
主分类号 |
H01L25/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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