发明名称 HYBRID INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem of size bulkiness of a hybrid IC device using a metal substrate with the backside of the metal substrate exposed and a heat radiating film provided on the exposed surface. SOLUTION: A desired circuit is achieved by providing a first circuit element group on the surface of a metal substrate 13, and a second circuit element group on the backside of the metal substrate. The surface and backside coating resins, and the side covering resin are formed integrally with a transfer mold. A third arrangement region B on the backside has the substrate backside exposed with a heat radiating film 21 provided therein. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009010213(A) 申请公布日期 2009.01.15
申请号 JP20070170851 申请日期 2007.06.28
申请人 SANYO ELECTRIC CO LTD;SANYO SEMICONDUCTOR CO LTD 发明人 SAKUMA YUKINAO;ICHIHASHI JUNICHI;KATAOKA HIROYUKI;IIMURA TOSHIYUKI;TSUYUKI SHINICHI
分类号 H01L25/07;H01L23/36;H01L25/18 主分类号 H01L25/07
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