| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor storage device, by which the occurrence of a defective region due to solid-phase growth can be controlled, a region where a circuit can not be disposed is minimized and an SOI crystal layer is effectively used, and the manufacturing cost is reduced as a result. SOLUTION: The method of manufacturing the semiconductor storage device includes: forming opening portions in an insulating film formed on a silicon substrate at a plurality of places; forming an amorphous silicon film on the insulating film formed with the opening portions and in the opening portions; forming a groove which separates the amorphous silicon film into one opening portion side and the other opening portion side near the center between adjacent opening portions; annealing the amorphous silicon film formed with the groove and solid-phase growing a single crystal using the opening portions as a seed, thereby forming a silicon single-crystal layer; and forming a memory cell array on the silicon single crystal layer. COPYRIGHT: (C)2009,JPO&INPIT
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