发明名称 |
CONFORMAL DOPING USING HIGH NEUTRAL PLASMA IMPLANT |
摘要 |
<p>A plasma doping apparatus includes a plasma source that generates a pulsed plasma. A platen supports a substrate proximate to the plasma source for plasma doping. A structure absorbs a film which provides a plurality of neutrals when desorbed. A bias voltage power supply generates a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A radiation source irradiates the film absorbed on the structure, thereby desorbing the film and generating a plurality of neutrals that scatter ions from the plasma while the ions are being attracted to the substrate, thereby performing conformal plasma doping.</p> |
申请公布号 |
WO2009009272(A2) |
申请公布日期 |
2009.01.15 |
申请号 |
WO2008US67587 |
申请日期 |
2008.06.20 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;WALTHER, STEVEN, R. |
发明人 |
WALTHER, STEVEN, R. |
分类号 |
C23C16/00;H01L21/26 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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