发明名称 A PROCESSING SYSTEM PLATEN HAVING A VARIABLE THERMAL CONDUCTIVITY PROFILE
摘要 <p>A platen for a processing system includes a first and a second thermal region that are separated by at least one boundary. A first fluid conduit is positioned in the first thermal region. A second fluid conduit is positioned in the second thermal region. A fluid reservoir having a first output is coupled to the first fluid conduit and a second output that is coupled to the second fluid conduit. The fluid reservoir provides fluid to the first fluid conduit with first fluid conditions that provides a first thermal conductivity to the first thermal region and provides fluid to the second fluid conduit with second fluid conditions that provides a second thermal conductivity to the second thermal region so that a predetermined thermal conductivity profile is achieved in the platen.</p>
申请公布号 WO2009009526(A2) 申请公布日期 2009.01.15
申请号 WO2008US69409 申请日期 2008.07.08
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;SINGH, VIKRAM;MUKA, RICHARD, S.;MILLER, TIMOTHY, J.;CHOI, CHANGHOON 发明人 SINGH, VIKRAM;MUKA, RICHARD, S.;MILLER, TIMOTHY, J.;CHOI, CHANGHOON
分类号 H01L21/265 主分类号 H01L21/265
代理机构 代理人
主权项
地址