| 摘要 |
<p>Static random access memory (SRAM) cells and methods of operation are provided which may be used to provide improved writeability and stability to support low voltage operation of memory devices. For example, in one implementation, by temporarily interrupting the connection between portions of an SRAM cell (125,145) and a power source (105) such as a reference voltage or current source, the writeability of SRAM cells can be improved. Additional read port implementations are also provided to facilitate low voltage operation. In another implementation, a power switch circuit (101) responsive to a word line (190) and logic signals (102,103) may be used to provide such interruptions.</p> |
