| 摘要 |
<p>A phase change memory is produced by forming a multilayer pattern on an insulating film (41) in which a plug (43) as a lower electrode is embedded. The multilayer pattern is composed of an insulating film (51) made of tantalum oxide, a recording layer (52) made of a Ge-Sb-Te chalcogenide to which indium is introduced, and an upper electrode film (53) made of tungsten or a tungsten alloy. By having the insulating film (51) between the recording layer (52) and the plug (43), there can be attained an effect of reducing the programming current of the phase change memory and an effect of preventing separation of the recording layer (52). By using a Ge-Sb-Te chalcogenide to which indium is introduced as the recording layer (52), the work function difference between the insulating film (51) and the recording layer (52) is increased, thereby reducing the programming voltage of the phase change memory.</p> |
