| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a high-reliability BGA-type semiconductor device in which the breaking of a conductive wiring and breaking of an external terminal are suppressed. <P>SOLUTION: In the semiconductor device insulating films 3 each covering the individual lands 2b are separated from each other; and dummy wirings 10 protrude from the sides 3b of each of the insulating films 3 to the conductive wirings 2, and the like, connected to the lands 2b. As a result, the occupation ratio of a wiring material with large rigidity inside the insulating film 3 can be set large, and restriction on the heat distortion of the insulating film 3 itself is strengthened by the dummy wiring 10. Moreover, it is also possible to suppress the separation of the side 3b of the insulating 3 film by the conductive wiring 2 and the dummy wiring 10, enabling prevention of the amount of heat distortion of the insulating film 3 due to the separation of the side 3b from increasing. <P>COPYRIGHT: (C)2009,JPO&INPIT |
