| 摘要 |
PROBLEM TO BE SOLVED: To manufacture, without being subjected to a process of forming barriers for configurating an organic semiconductor film, an organic transistor having an organic semiconductor film formed by the coat method. SOLUTION: The organic transistor is characterized in that it includes: (1) a source electrode portion and a drain electrode portion formed on a substrate; (2) barriers which are selectively formed on some parts of the source electrode portion and the drain electrode portion; (3) the organic semiconductor film which is arranged in an area defined by the barriers and connects the source electrode portion with the drain electrode portion; and (4) a gate electrode which is formed on the organic semiconductor film via a gate insulating film, wherein there is a gap between the barrier formed on the source electrode portion and the barrier formed on the drain electrode portion. COPYRIGHT: (C)2009,JPO&INPIT
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