| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus, a manufacturing method thereof and an imaging apparatus, wherein a transfer electrode having no warp-up in both end parts, hence no formation of a potential dip, and having no decline in transfer efficiency can be formed with the same resistance and same film thickness as a conventional one. SOLUTION: A first transfer electrode 25 and a second transfer electrode 26 are so formed as to have a three-layer structure consisting of a non-doped polysilicon layer 31 doped with no impurities, an oxide film layer 32, and a polysilicon layer 33 doped with impurities, which are stacked in this order. COPYRIGHT: (C)2009,JPO&INPIT
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