| 摘要 |
<p>[PROBLEMS] To provide a semiconductor device capable of efficiently transmitting the stress generated in a stress film to a channel section, and provide a manufacturing method of the semiconductor device. [MEANS FOR SOLVING PROBLEMS] A semiconductor device is provided with a silicon (Si) substrate having a projected portion, a gate insulation film that is formed on the upper surface of the projected portion, a gate electrode that is formed on the gate insulation film, a source region and a drain region that are provided on the side part of the projected portion, a first sidewall comprising an insulating material provided on the side face of the projected portion and on the silicon (Si) substrate adjacent to the projected portion, a second sidewall that is arranged on the first sidewall and has a bottom surface formed lower than the upper surface with a Young's modulus higher than that of the silicon (Si) substrate, and a stress film that is formed on the gate electrode and the second sidewall.</p> |
