发明名称 SEMICONDUCTOR MEMORY DEVICE AND SYSTEM
摘要 <p>A semiconductor memory device includes a memory cell array, a redundant element, an address designating section for selecting one address from a plurality of addresses as a redundant address according to changeover signals, a decoder circuit for selecting the redundant element at the time when the address inputted from the outside matches the redundant address selected by the address designating section, and a test-mode setting circuit that is configured to change the redundant address allocated to the redundant element by changing the changeover signal according to the input from the outside.</p>
申请公布号 WO2009008078(A1) 申请公布日期 2009.01.15
申请号 WO2007JP63855 申请日期 2007.07.11
申请人 FUJITSU MICROELECTRONICS LIMITED;KOBAYASHI, HIROYUKI;KITAYAMA, DAISUKE 发明人 KOBAYASHI, HIROYUKI;KITAYAMA, DAISUKE
分类号 G11C29/04 主分类号 G11C29/04
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