| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing method for semiconductor devices capable of preventing faults due to uneven polishing in the edge regions. SOLUTION: The method includes a step of forming a diffusion prevention film 12 and a metal layer 13 on a semiconductor substrate 10, a step of forming a passivation film 14 on the metal layer, a step of removing the passivation film, the metal layer and the diffusion prevention film in an inhibited region X provided in an edge region by etching, and a step of forming metal wiring after planarizing the passivation film, the metal layer and the diffusion prevention film of a region other than the prohibited region X in a process of the chemical mechanical polishing. COPYRIGHT: (C)2009,JPO&INPIT
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