| 摘要 |
PROBLEM TO BE SOLVED: To improve a MR change rate and heat resistance much more than ever before. SOLUTION: The invention provides a magneto-resistive effect element having a CPP (current perpendicular to plane) structure comprising a spacer layer (40), and two magnetized layers (30, 50) stacked one upon the other with the spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the spacer layer (40) comprises a first nonmagnetic metal layer (41) and a second nonmagnetic metal layer (43), each formed of a nonmagnetic metal material, and a semiconductor oxide layer (42) interposed between the first nonmagnetic metal layer and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms the spacer layer is made of at least one kind selected from a group of zinc oxide, tin oxide, indium oxide, and indium tin oxide (ITO: Indium Tin Oxide), the first nonmagnetic metal layer is made of Cu, and the second nonmagnetic metal layer is substantially made of Zn. COPYRIGHT: (C)2009,JPO&INPIT
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