| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can sufficiently suppress a crack caused in an interlayer insulating film covering a gate electrode having a projection on a face upper than a source region. SOLUTION: The interlayer insulating film 7 arranged in the gate electrode 6 is provided with a first interlayer insulating film 70 formed on a first projection 60a, and a second interlayer insulating film 71 formed on a second projection 61a. The first interlayer insulating film 70 is installed along upper faces of the projection 60a of the first control electrode 60 and steps 9 and 9a. The width of the upper face of the second projection 61a is made larger than that of the upper face of the first projection 60a. A crack generation rate of the projection of the gate electrode 6 can be suppressed to within an allowable range. COPYRIGHT: (C)2009,JPO&INPIT
|
