SUBSTRATE PROCESSING SYSTEM AND METHOD

摘要

A substrate processing system includes a resist pattern forming apparatus including modules each configured to perform a predetermined process on a substrate with an underlying film formed thereon, an etched pattern forming apparatus including chambers each configured to perform patterning of the underlying film by use of a resist pattern as a mask, and examination devices configured to perform measurement and examination of a pattern attribute rendered on a substrate after a process in the resist pattern forming apparatus and after a process in the etched pattern forming apparatus. A controller is preset to utilize measurement results and transfer data to calculate correction value ranges respectively settable in the modules and the chambers and to determine combinations of the modules and the chambers such that corrections made within the correction value ranges cause a pattern attribute to approximate a predetermined value for each of the substrates.