| 摘要 |
A programming method of a multi-bit flash memory device includes programming multi-bit data into selected memory cells through pluralities of programming loops. In each programming loop, an increment of a programming voltage applied to the selected memory cells is varied in accordance with a result of program-verification for each data state of the multi-bit data and reading-verification for a data state is skipped when the program-verification indicates that data state has passed.
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