发明名称 |
High voltage operating field effect transistor, bias circuit therefor and high voltage circuit thereof |
摘要 |
A high voltage operating field effect transistor has a source region and a drain region spaced apart from each other in a surface of a substrate. The source region is operative to receive at least one of a signal electric potential and a signal current. A semiconductor channel formation region is disposed in the surface of the substrate between the source region and the drain region. A gate region is disposed above the channel formation region and is operative to receive a bias electric potential having an absolute value equal to or larger than a first constant electric potential which changes according to an increase or decrease in a drain electric potential. A gate insulating film region is disposed between the channel formation region and the gate region.
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申请公布号 |
US2009014765(A1) |
申请公布日期 |
2009.01.15 |
申请号 |
US20080283639 |
申请日期 |
2008.09.12 |
申请人 |
HAYASHI YUTAKA;HASEGAWA HISASHI;YOSHIDA YOSHIFUMI;OSANAI JUN |
发明人 |
HAYASHI YUTAKA;HASEGAWA HISASHI;YOSHIDA YOSHIFUMI;OSANAI JUN |
分类号 |
H01L27/04;H03K5/08;H01L21/822;H01L21/8234;H01L21/8238;H01L27/06;H01L27/08;H01L27/092;H01L27/12;H01L29/76;H01L29/78;H01L29/786 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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