CLEANING COMPOSITION FOR REMOVING RESIST

摘要

A cleaning composition for removing resist includes quaternary ammonium hydroxide, water, alkyl glycol aryl ether, dimethylsulfoxide and corrosion inhibitor of polyacrylic acid. The alkyl glycol of alkyl glycol aryl ether has 3-18 carbon atoms. The cleaning composition for removing resist may clean the resist on a metal, metal alloy or dielectric substrate and other residues, and has low etch rate for metals such as Al and Cu, and nonmetals such as SiO2.