NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

The non-volatile semiconductor memory device and manufacturing method thereof are provided to reduce the area of variable resistance patterns by overlapping partially the bottom electrodes and the bit lines. The contact hole(306) is formed on the first interlayer insulating film(304). The photoresist pattern is formed on the second inter metal dielectric(316). The spacer(352) is formed on the side wall of photoresist patterns. After photoresist patterns are removed, the second inter metal dielectric is etched and the second inter metal dielectric groove(354) is formed. After spacers are removed, the variable resistance pattern(318) and bit line(320) are formed.