| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing electric field concentration in an edge part of a semiconductor element forming region and of preventing an impairment of roll-off properties of a semiconductor element formed in a semiconductor element forming region which can be reduced in thickness and prevents the needless increase of the number of manufacturing steps, and to provide a method of manufacturing the same. SOLUTION: On a silicon dioxide film 503 filled inside a trench 515 in a trench-type element separated region, a silicon nitride film 504 is formed. The silicon nitride film 504 is not formed on a semiconductor element forming region 516. The wet etching rate of the silicon nitride film 504 by a fluorine-containing chemical liquid is smaller than that of the silicon dioxide film 503 by a fluorine-containing chemical liquid. The upper surface of the silicon nitride film 504 lies at a position in a range from a position lower by 50 nm to a position higher by 50 nm for the surface of the semiconductor element forming region 516. COPYRIGHT: (C)2009,JPO&INPIT
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