| 摘要 |
PROBLEM TO BE SOLVED: To suppress the ingress of impurity and the generation of leak current to improve the reliability of a semiconductor device. SOLUTION: An insulating portion 11 having on a silicon (111) substrate 1 a silicon oxide film 2a and a silicon nitride film 3a that are laminated in increasing order is joined to an insulating portion 12 having on a silicon (111) substrate 4 a silicon nitride film 3b, via a silicon nitride film 3 formed by bonding together the silicon nitride film 3a and the silicon nitride film 3b to form an insulating portion 13. An insulating portion 13a formed by removing the silicon (111) substrate 1 from the insulating portion 13 is joined to an insulating portion 14 having on a silicon (100) substrate 5 a silicon oxide film 2b, via a silicon oxide film 2 formed by bonding together the silicon oxide film 2a and the silicon oxide film 2b. From the joint structure, the silicon (111) substrate 4 is then removed to form a gate insulating film 15 on the silicon (100) substrate 5. COPYRIGHT: (C)2009,JPO&INPIT
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