JUNCTION-PHOTOVOLTAGE METHOD AND APPARATUS FOR CONTACTLESS DETERMINATION OF SHEET RESISTANCE AND LEAKAGE CURRENT OF SEMICONDUCTOR

摘要

The invention relates to a junction-photo voltage method and apparatus for contactless determination of an electrical and/or physical parameter of a semiconductor structure comprising at least one p-n junction located at a surface, wherein the method comprises the steps of: illuminating the surface with the p-n junction of the semiconductor structure with a light beam of a first wavelength to create excess carriers at the surface; modulating the light intensity of the light beam at a single predefined frequency; determining a first photo-voltage at a first position inside the illuminated area and determining a second photo-voltage at at least a second position outside the illuminated area; and calculating an electrical and/or physical parameter of the semiconductor structure based on the first photo-voltage and on the second photo- voltage. In this way, a fast, accurate and easy to use possibility for contactless determination of an electrical and/or physical parameter of a semiconductor structure is provided.