发明名称 |
PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, SEMICONDUCTOR PRODUCTION APPARATUS, AND STORAGE MEDIUM |
摘要 |
<p>This invention provides a process for producing a semiconductor device, comprising a step (a) of activating an organic silane gas containing a phenyl group and silicon and free from nitrogen other than unavoidable impurities to produce plasma, and, in such a state that the temperature of a substrate is set at 200°C or below, exposing the substrate to the plasma to form a thin film containing a phenyl group and silicon on the substrate, and a step (b) of applying energy to the substrate to eliminate water from the thin film to form a low-permittivity film. This production process can provide an organic material-containing silicon oxide-type low-permittivity film which, when subjected to etching treatment, ashing treatment or other plasma treatment, does not cause any significant damage caused by the elimination of the organic matter.</p> |
申请公布号 |
WO2009008376(A1) |
申请公布日期 |
2009.01.15 |
申请号 |
WO2008JP62203 |
申请日期 |
2008.07.04 |
申请人 |
TOKYO ELECTRON LIMITED;KATO, YOSHIHIRO;KASHIWAGI, YUSAKU;MATSUMOTO, TAKASHI |
发明人 |
KATO, YOSHIHIRO;KASHIWAGI, YUSAKU;MATSUMOTO, TAKASHI |
分类号 |
H01L21/312;C23C16/42;H01L21/31;H01L21/768;H01L23/522 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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