发明名称 METHODS OF MAKING NANO-SCALE STRUCTURES HAVING CONTROLLED SIZE, NANOWIRE STRUCTURES AND METHODS OF MAKING THE NANOWIRE STRUCTURES
摘要 <p>Methods of making nanometer-scale semiconductor structures with controlled size are disclosed. Semiconductor structures (200, 300, 400, 500, 600. 700) that include one or ore nanowires (104, 204, 304, 404, 504, 604, 704) are also disclosed. The nanowires can include a passivation layer or have a hollow tube structure.</p>
申请公布号 WO2009008923(A2) 申请公布日期 2009.01.15
申请号 WO2008US04423 申请日期 2008.04.02
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P.;KOBAYASHI, NOBUHIKO;WU, WEI;STEWART, DUNCAN;SHARMA, SHASHANK;WANG, SHIH-YUAN;WILLIAMS, R. STANLEY, 发明人 KOBAYASHI, NOBUHIKO;WU, WEI;STEWART, DUNCAN;SHARMA, SHASHANK;WANG, SHIH-YUAN;WILLIAMS, R. STANLEY,
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