发明名称 |
NEW COBALT PRECURSORS FOR SEMICONDUCTOR APPLICATIONS |
摘要 |
Methods and compositions for depositing a cobalt containing film on one or more substrates are disclosed herein. A cobalt precursor, which comprises at least one pentadienyl ligand coupled to the cobalt for thermal stability, is introduced into a reaction chamber containing one or more substrates, and the cobalt precursor is deposited to form a cobalt containing film onto the substrate. |
申请公布号 |
WO2008142653(A3) |
申请公布日期 |
2009.01.15 |
申请号 |
WO2008IB52012 |
申请日期 |
2008.05.21 |
申请人 |
L'AIR LIQUIDE-SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE;DUSSARRAT, CHRISTIAN |
发明人 |
DUSSARRAT, CHRISTIAN |
分类号 |
C23C16/18;C07F15/06;C23C16/30;C23C16/34;C23C16/40 |
主分类号 |
C23C16/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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