| 摘要 |
An input buffer of semiconductor memory device is provided to increase the immunity to the noise flowed into a reference voltage by amplifying the input signal of the reference voltage in advance. In an input buffer of semiconductor memory device, a first amplification unit(100) amplifies the input signal(IN3), and it includes a resistor(R3) and a NMOS transistor(NM4). The resistor is connected between the supply terminal and output node(N1) of the power voltage(VDD). The first amplification unit has the input signal(IN3) to the gate input, and it has the drain-source path between the supply terminal of the ground voltage(VSS) and output node. A second amplification unit(200) outputs positive and negative output signal(OUT3, OUT3 B) by amplifying the level of the output signal of the first amplification unit, and it includes the current source transistor(NM5), a differential input transistor(220) and loading unit(240).
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