发明名称 |
CRYSTAL GROWTH METHOD AND CRYSTAL GROWTH APPARATUS |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a crystal growth method by which a large size single crystal having high quality and free from cracks can be grown and which is excellent in productivity of the single crystal; and to provide a crystal growth apparatus used for the same. <P>SOLUTION: The crystal growth method comprises obtaining a single crystal of a compound from a raw material liquid and a raw material gas by heating the raw material liquid and the raw material gas in a reactor to react them. After separating the single crystal from the raw material liquid, cooling is started. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
申请公布号 |
JP2009007207(A) |
申请公布日期 |
2009.01.15 |
申请号 |
JP20070171274 |
申请日期 |
2007.06.28 |
申请人 |
SHARP CORP |
发明人 |
ANDO HIROYUKI;FURUKAWA KAZUHIKO |
分类号 |
C30B9/12;C30B29/38;H01L33/00 |
主分类号 |
C30B9/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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