发明名称 DUTY DETECTION CIRCUIT, DLL CIRCUIT USING THE SAME, SEMICONDUCTOR MEMORY CIRCUIT, AND DATA PROCESSING SYSTEM
摘要 A duty detection circuit includes discharge transistors, charge transistors, detection lines, and a comparator circuit that detects a potential difference of these detection lines, and also includes a gate circuit that controls the discharge transistors and the charge transistors in response to the internal clock signal of an even cycle. As a result, the detection lines are charged and discharged in response to the internal clock signal of the even cycle. Consequently, the duty detection circuit can be applied to a multi-phase DLL circuit, and a potential difference appearing in the detection line can be sufficiently secured.
申请公布号 US2009016127(A1) 申请公布日期 2009.01.15
申请号 US20080170730 申请日期 2008.07.10
申请人 ELPIDA MEMORY, INC. 发明人 KUROKI KOJI;TAKAI YASUHIRO
分类号 G11C7/00;G11C8/18 主分类号 G11C7/00
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