发明名称 METHOD OF MANUFACTURING CAPACITOR
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a capacitor which can prevent leaning phenomenon that may cause a storage node bridge during wet-etching to form a cylindrical storage node structure and drying process. SOLUTION: The method includes the steps of exposing an upper part of a cylindrical storage node 25 formed on a substrate 21 having a cell region and a peripheral circuit region, forming a mesh type support 26C of amorphous carbon supporting the exposed upper portion of the storage node 25, forming a capping film on the support 26C, opening a peripheral circuit region and removing the capping film in the peripheral circuit region using the mask to cover the cell region, removing the support 26C for the mask and the peripheral circuit region, removing the capping film remaining in the cell region and a sacrificial film remaining in the cell region and the peripheral circuit region, and removing the support remaining in the cell region. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009010318(A) 申请公布日期 2009.01.15
申请号 JP20070337412 申请日期 2007.12.27
申请人 HYNIX SEMICONDUCTOR INC 发明人 LEE KI-JUNG;RO SAISEI;YEOM SEUNG JIN;SO KANSO;KIL DEOK-SIN;KIN EIDAI;KIM JIN-HYOCK;DO KWAN-WOO
分类号 H01L21/8242;H01L27/108 主分类号 H01L21/8242
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