| 发明名称 |
POWER SEMICONDUCTOR DEVICE HAVING IMPROVED PERFORMANCE AND METHOD |
| 摘要 |
In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a counter-doped drain region spaced apart from a channel region.
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| 申请公布号 |
US2009014814(A1) |
申请公布日期 |
2009.01.15 |
| 申请号 |
US20080236947 |
申请日期 |
2008.09.24 |
| 申请人 |
|
发明人 |
LOECHELT GARY H.;ZDEBEL PETER J. |
| 分类号 |
H01L47/00;H01L21/8236 |
主分类号 |
H01L47/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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