PHASE CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A phase change memory device is provided. The phase change memory device comprises a substrate. A first conductive layer is formed on the substrate. A heating electrode is formed on the first conductive layer, and electrically connected to the first conductive layer, wherein the heating electrode comprises a carbon nanotube (CNT). A phase change material layer covers the heating electrode. A second conductive layer is formed on the phase change material layer, and electrically connected to the phase change material layer.