发明名称 |
METHOD OF FORMING EPITAXIAL LAYER |
摘要 |
A method of forming an epitaxial layer on a silicon substrate includes (a) providing a silicon substrate; (b) performing a wet-cleaning process onto the silicon substrate; (c) performing a first plasma cleaning process onto the wet-cleaned silicon substrate by providing a chlorine (Cl2) gas and an argon (Ar) gas; and (d) forming an epitaxial growth film on the silicon substrate after the (c) step.
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申请公布号 |
US2009017603(A1) |
申请公布日期 |
2009.01.15 |
申请号 |
US20080171157 |
申请日期 |
2008.07.10 |
申请人 |
JUSUNG ENGINEERING CO., LTD. |
发明人 |
YANG CHEOL-HOON |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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