发明名称 METHOD OF MANUFACTURING DISPLAY
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a display by which the display can be mass-produced without complicating a thin-film transistor process. SOLUTION: A microcrystalline semiconductor film is formed by using a microwave plasma CVD apparatus at a frequency of not less than 1 GHz and using silicon hydride or silicon halide as source gas, and a thin-film transistor using the microcrystalline semiconductor film and a display element connected to the thin-film transistor are formed. Since plasma generated by using microwaves at a frequency of not less than 1 GHz has high electron density, silicon hydride or silicon halide which is source gas can be easily dissociated, so that mass productivity of the display can be improved. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009010347(A) 申请公布日期 2009.01.15
申请号 JP20080130460 申请日期 2008.05.19
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI
分类号 H01L21/336;C23C16/42;C23C16/511;H01L29/786 主分类号 H01L21/336
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