摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a display by which the display can be mass-produced without complicating a thin-film transistor process. SOLUTION: A microcrystalline semiconductor film is formed by using a microwave plasma CVD apparatus at a frequency of not less than 1 GHz and using silicon hydride or silicon halide as source gas, and a thin-film transistor using the microcrystalline semiconductor film and a display element connected to the thin-film transistor are formed. Since plasma generated by using microwaves at a frequency of not less than 1 GHz has high electron density, silicon hydride or silicon halide which is source gas can be easily dissociated, so that mass productivity of the display can be improved. COPYRIGHT: (C)2009,JPO&INPIT |